PART |
Description |
Maker |
SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg,快速开关WFET ® ,VDS=30V; VGS=±20V N-Channel Reduced Qg, Fast Switching WFET N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
SI2300 |
VDS=20V,RDS(ON)=40m VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m
|
TY Semiconductor Co., Ltd
|
KI5902DC |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
KI4920DY |
Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
KI4562DY |
PIN Configuration Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
KI5904DC |
Drain-Source Voltage VDS 20V Gate-Source Voltage VGS -12V
|
TY Semiconductor Co., Ltd
|
KX7N10L |
VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A
|
TY Semiconductor Co., Ltd
|
ST63P56 ST6356 ST6357 ST6327 ST6326 ST63PXX ST6306 |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.8A; On-Resistance, Rds(on):0.062ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-1206; Leaded Process Compatible:No 8位微控制器HCMOS背驮式电视应 (ST63Pxx) 8 Bit HCMOS Piggyback MCUs for TV Applications 8-BIT HCMOS PIGGYBACK MCUs FOR TV APPLICATIONS
|
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
KI4511DY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V N-Channel Enhancement Mode Field Effect Transistor
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FAIRCHILD[Fairchild Semiconductor]
|